PhD, MSc

Nano-Silicon Group Leader, Associate Professor

Dr Maksym Myronov is an expert, with over 15 years of experience, in epitaxial growth, materials characterization and devices technologies of the Group IV (Si, Ge, Diamond, Si1-xGex, Si1-xCx, Ge1-xSnx, Ge1-x-ySnxSiy, 3C-SiC, 4H-SiC, 6H-SiC etc) and III-V (InSb, GaAs, GaN etc) semiconductors. In 2008, he established SiGe Reduced Pressure Chemical Vapour Deposition (RP-CVD) growth capabilities at Warwick. Since then Maksym has been leading and developing them followed by expansion to Si-Ge-C-Sn and SiC epitaxial growth capabilities. Later on he installed the first in the UK Silicon Carbide CVD system which has expanded the Warwick’s epitaxial growth capabilities to 3C-SiC, 4H-SiC and 6H-SiC wide band gap semiconductor materials.
He mainly researches epitaxy of the Group-IV and III-V semiconductors thin films and low-dimensional structures with special interest in creation of novel epitaxial material systems for applications in electronic, photonic, thermoelectric, spintronic, photovoltaic, sensors, MEMS/NEMS, energy storage and quantum devices.
He has actively participated in 3 European, 3 Japanese and over 10 UK EPSRC and STFC funded projects by leading epitaxial growth research activities and developing novel epitaxial structures.
He has published over 350 papers, including over 140 in refereed international scientific journals, 4 book chapters, given over 150 talks at national and international conferences/workshops and filed 7 patents.

Maksym has been collaborating with scientists, researchers and engineers from UK, Europe, USA, Asia and Japan establishing strong links with industrial and academic communities.

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