Skip to main content Skip to navigation

Department of Physics

Martin Prest

Research Fellow


Research Interests


  • Strained silicon and silicon germanium heterostructures, electrical and physical characterisation.
  • Degenerate doping in strained silicon.
  • Normal metal - insulator - superconductor tunnel junctions.
  • Cold electrons and tunnel junction thermometry.
  • Electron-phonon coupling in strained silicon structures.
  • Superconducting silicides.
  • Schottky source-drain MOS devices.
  • Microelectromechanical devices and fabrication.
  • Low frequency noise in SiGe MOSFETs.
  • Low temperature electrical measurements.
  • Semiconductor/superconductor device fabrication.


BOOKS


Chapter 19. “Millikelvin Tunnelling Refrigerators” M.J. Prest, T.E. Whall, E.H.C. Parker and D.L. Leadley, CRC Review: Thermoelectrics and its Energy Harvesting: Modules, Systems and Applications, (Ed. D.M. Rowe) CRC Press 2012.


JOURNAL PAPERS


“Strain enhanced electron cooling in a degenerately doped semiconductor” M. J. Prest, J. T. Muhonen, M. Prunnila, D. Gunnarsson, V. A. Shah, R. J. H. Morris, A. Dobbie, M. Myronov, T. E. Whall, E. H.C. Parker, and D. R. Leadley, APL 99 251908 (2011).
“On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors” S.M. Thomas, M. J. Prest, T.E.Whall, C.S. Beer, D.R. Leadley, E.H.C. Parker, J. Watling, R.J.P. Lander and G. Vellianitis, JAP 110 124503 (2011).
“Strain control of electron-phonon energy loss rate in many-valley semiconductors” J. T. Muhonen, M. J. Prest, M. Prunnila, D. Gunnarsson, V. A. Shah, R. J. H. Morris, A. Dobbie, M. Myronov, T. E. Whall, E. H.C. Parker, and D. R. Leadley, APL 98 (18) 182103 (2011).
“A Rocking Tune” Feature Article, Y. Wang, M. J. Prest, M. J. Lancaster, IEEE Electronics Letters 46 (23) 1529 (2010).
“Cryogenic performance of a micromachined silicon rocking actuator for tuning of a superconducting resonator” Y. Wang, M. J. Prest, M. J. Lancaster, IEEE Electronics Letters 46 (23) 1569 (2010).
“Tuning of a Superconducting Microwave Resonator at 77 K using an Integrated Micromachined Silicon Vertical Actuator” M. J. Prest, Y. Wang, F. Huang and M. J. Lancaster, IOP JMM 20 095032 (2010).
“Silicon comb-drive actuators for low-temperature tuning of superconducting microwave circuits” M. J. Prest, Y. Wang, F. Huang and M. J. Lancaster, J. Micromech. Microeng. 18 125003 (2008).
Invited Paper “Low frequency noise in Si and Si/SiGe/Si PMOSFETs” S.J. Thomas, M.J. Prest, D.J.F. Fulgoni, A.R. Bacon, T.J. Grasby, D.R. Leadley, E.H.C. Parker and T.E. Whall, pp. 64-68, Journal of Telecommunications and Information Technology 2/2007.
“Performance of RF MEMS Switches at Low Temperatures” Hieng Tiong Su, Ignacio Llamas-Garro, Michael J. Lancaster, Martin Prest, Jae-Hyoung Park, Jung-Mu Kim, Chang-Wook Baek, and Yong-Kweon Kim, Electronics Letters, Vol. 42, No. 21, pp 1219 – 1220, October 2006.
“Low-frequency noise mechanisms in Si and pseudomorphic SiGe p-channel field-effect transistors” M. J. Prest, A. R. Bacon, D. J. F. Fulgoni, T. J. Grasby, E. H. C. Parker, T. E. Whall, A. M. Waite, Applied Physics Letters 85 (24) 6019-6021 (2004).
“Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10K and 300K” V. Gaspari, K. Fobelets, J. E. Velazquez-Perez, M. J. Prest, T. E. Whall, Semiconductor Science And Technology 19 (9) L95-L98 (2004).
“Transconductance, Carrier Mobility and 1/f Noise in Si/Si0.64ge0.36/Si pMOSFETs” M. J. Prest, M. J. Palmer, T. J. Grasby, P. J. Phillips, O. A. Mironov, E. H. C. Parker and T. E. Whall, A. M. Waite and A. G. R. Evans, J. R. Watling, A. Asenov and J. R. Barker, Mat.Sci. Eng. B89 444-448 (2002).
“Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers” M. J. Palmer, G. Braithwaite, T. J. Grasby, P. J. Phillips, M. J. Prest, E. H. C. Parker, T. E. Whall, C. P. Parry, A. M. Waite, A. G. R. Evans, S. Roy, J. R. Watling, S. Kaya, and A. Asenov, Applied Physics Letters, 78 (10), 1424-1426 (2001).
“Si/Si0.64Ge0.36/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise” M. J. Prest, M. J. Palmer, G. Braithwaite, T. J. Grasby, P. J. Phillips, O. A. Mironov, E. H. C. Parker, T. E. Whall, A. M. Waite and A. G. R. Evans, Proc. of 31st European Solid-State Device Research Conference (ESSDERC), Nuremburg, Germany, 179 (2001).
“Enhanced Velocity Overshoot and Transconductance in Si/Si0.64Ge0.36/Si pMOSFETs - Predictions for Deep Submicron Devices” M. J. Palmer, G. Braithwaite, M. J. Prest, E. H. C. Parker, T. E. Whall, Y. P. Zhao, S. Kaya, J. R. Watling, J. R. Barker, A. Asenov, A. M. Waite and A. G. R. Evans, Proc. of 31st European Solid-State Device Research Conference (ESSDERC), Nuremburg, Germany, 199 (2001).


CONFERENCE PRESENTATIONS


Invited talk “Cooltronics (Solid State Refrigeration below one Kelvin)” M. J. Prest, J. T. Muhonen, M. Prunnila, D. Gunnarsson, J. S. Richardson-Bullock, V. A. Shah, T. E. Whall, E. H. C. Parker, D. R. Leadley, 2nd Workshop on Phonons and Fluctuations, Paris, France, 8th to 9th September 2011.
“Strain Enhancement of Electron Cooling in Silicon-Superconductor Tunnel Junctions” J. S. Richardson-Bullock, M. J. Prest, J. T. Muhonen, M. Prunnila, D. Gunnarsson, V. A. Shah, T. E. Whall, E. H. C. Parker, D. R. Leadley, 26th International Conference on Conference on Low-Temperature Physics (LT-26), Beijing, China, 10th to 17th August 2011.
“Strained Silicon for Bolometer Applications” M. J. Prest, J. T. Muhonen, M. Prunnila, D. Gunnarsson, V. A. Shah, T. E. Whall, E. H. C. Parker, D. R. Leadley, 14th International Workshop on Low Temperature Detectors (LTD-14), Heidelberg, Germany, 1st-5th August 2011.
“Improved Cooling Performance in Strained Silicon Tunnel Junctions” J. S. Richardson-Bullock, M.J. Prest, J.T. Muhonen, M. Prunnila, D. Gunnarsson, V.A. Shah, R.J.H. Morris, A. Dobbie, M. Myronov, T.E. Whall, E.H.C. Parker, D.R. Leadley, 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium, 28th August to 1st September 2011.
“Reduction of Electron-Phonon Conductance in Strained Silicon” D. Gunnarsson, M. Prunnila, M. J. Prest, J. T. Muhonen, V. A. Shah, T. E. Whall, E. H. C. Parker, D. R. Leadley, 13th International Workshop on Cryogenic Nanosensors, Bjorkliden, Sweden, 20-27th March 2011.
“THz direct detector based on Si with superconducting contacts” D. Morozov, P. Mauskopf, P. Barry, T. Brien, T. E. Whall, M. J. Prest, Applied Superconductivity Conference, Washington DC, USA, 1-6th August 2010.
“Low temperature effective mobility measurements and modelling of high-k gated Si n-MOS and p-MOS devices” S.M. Thomas, M. J. Prest, T.E.Whall, C.S. Beer, D.R. Leadley, E.H.C. Parker, J.R. Watling, R.J.P. Lander and G. Vellianitis, ULIS 2010, Glasgow, Scotland, 17-19 March 2010.
“Cooltronics – a new silicon technology” D.R. Leadley, M.J. Prest, T.E. Whall, E.H.C. Parker, M. Meschke, J. Muhonen, J.P. Pekola, J. Ahopelto and M. Prunnila. 8th Symposium Diagnostics & Yield Advanced Silicon Devices and Technologies for ULSI Era, Warsaw, June 22nd - June 24th 2009.
“Microwave applications of high temperature superconductors” M. Lancaster, F. Huang, T. Jackson, Y. Wang, M. Prest, J. Zhou, G. Zhang and P. Suherman, UK Magnetics Society, Superconducting Materials and Applications, 24 June 2009, Birmingham UK.
“Silicon MEMS tunable superconducting microwave circuits” M.J. Prest, Y. Wang and M.J. Lancaster - MEMSWAVE 2008, Heraklion, Greece, 30 June - 3 July 2008.
"Membrane Supported Transmission Lines and Filters" Yi Wang, M.J. Prest, M.J.Lancaster - accepted, EuMW2008, Amsterdam, The Netherlands, 27-31 Oct. 2008.
“Investigating the Performance of RF MEMS Switches” H.T. Su, I. Llamas-Garro, M.J. Lancaster, M.J. Prest, J-H. Park, J-M. Kim, C-W, Baek, and Y-K, Kim, ICSE2006 Proc., pp. 263-266, Kuala Lumpur, Malaysia 2006.
“Low frequency noise in Si and Si/SiGe/Si PMOSFETs” S.J. Thomas, M.J. Prest, D.J.F. Fulgoni, A.R. Bacon, T.J. Grasby, D.R. Leadley, E.H.C. Parker and T.E. Whall, 7th Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI Era. Warsaw University of Technology, Poland June 26-28, 2006.
“Modelling low temperature mobilities in pseudomorphic SiGe p-channel field-effect transistors” M. J. Prest, M. J. Kearney, M. J. Palmer, T. J. Grasby, M. Waite, A. G. R. Evans, E. H. C. Parker and T. E. Whall, CMMP, University of Wawick (2004).
“Carrier Mobility and 1/f Noise in Si/Si0.64Ge0.36/Si Dynamic threshold pMOSFETs” D. Fulgoni, M. J. Prest, M. J. Palmer, A. Bacon, T. J. Grasby, P. J. Phillips, A.Waite, A. Evans, E. H. C. Parker and T. E. Whall. Third International Conference on SiGe(C) Epitaxy and Heterostructures (ICSI3) Santa Fe, USA (2003).
“Si/Si0.64Ge0.36/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise” M. J. Prest, M. J. Palmer, G. Braithwaite, T. J. Grasby, P. J. Phillips, O. A. Mironov, E. H. C. Parker, T. E. Whall, A. M. Waite and A. G. R. Evans, Proc. of 31st European Solid-State Device Research Conference (ESSDERC), Nuremburg, Germany, (2001).
“Enhanced Velocity Overshoot and Transconductance in Si/Si0.64Ge0.36/Si pMOSFETs - Predictions for Deep Submicron Devices” M. J. Palmer, G. Braithwaite, M. J. Prest, E. H. C. Parker, T. E. Whall, Y. P. Zhao, S. Kaya, J. R. Watling, J. R. Barker, A. Asenov, A. M. Waite and A. G. R. Evans, Proc. of 31st European Solid-State Device Research Conference (ESSDERC), Nuremburg, Germany, (2001).
“Transconductance, Carrier Mobility and 1/f Noise in Si/Si0.64Ge0.36/Si pMOSFETs” M. J. Prest, M. J. Palmer, T. J. Grasby, P. J. Phillips, O. A. Mironov, E. H. C. Parker and T. E. Whall, A. M. Waite and A. G. R. Evans, J. R. Watling, A. Asenov and J. R. Barker, European Materials Research Society Spring Meeting (EMRS), Strasbourg, France (2001).
“Enhanced Velocity Overshoot in Si0.64Ge0.36 pMOSFETs at 77K” M. J. Palmer, G. Braithwaite, M. J. Prest, E. H. C. Parker, T. E. Whall, Y. P. Zhao, S. Kaya, J. R. Watling, A. Asenov, J. R. Barker, A. M. Waite N. S. Lloyd and A. G. R. Evans, European Materials Research Society Spring Meeting (EMRS), Strasbourg, France (2001).
“Low frequency noise in Si/Si1-xGex/Si heterostructure p-channel MOSFETs” M. J. Prest, G. Braithwaite, T. Grasby, P. Phillips, C. Parry, B. K. Jones, E. H. C. Parker and T. E. Whall, The 10th Heterostructure Workshop, Ulm, Germany, (2000).
“Growth, processing and characterization of Si/Si0.64Ge0.36/Si heterojunction p-MOSFETs with thin silicon caps” G. Braithwaite, T. J. Grasby, M. J. Palmer, M. J. Prest, C. P. Parry, P. J. Phillips, E. H. C. Parker, T. E. Whall, A. M. Waite, A. G. R. Evans, S. Roy, and A. Asenov International Joint Conference on Silicon Epitaxy and Heterostructures (IJC-Si), Myagi, Japan (1999).

Dr. Martin Prest


Write to:

Department of Physics,

University of Warwick,

Coventry, CV4 7AL

Contact Details:

Office: P440

Telephone:
44 (0)2476 150356
Fax:
44 (0)2476 692016
E-Mail:
m.j.prest@warwick.ac.uk